PART |
Description |
Maker |
CM100DU-24F CM100DU-24H |
Trench Gate Design Dual IGBTMOD?/a> 100 Amperes/1200 Volts HIGH POWER SWITCHING USE INSULATED TYPE Trench Gate Design Dual IGBTMOD⑩ 100 Amperes/1200 Volts Trench Gate Design Dual IGBTMOD 100 Amperes/1200 Volts
|
Mitsubishi Electric Semiconductor Powerex Power Semiconductors
|
CM50DU-24F |
Trench Gate Design Dual IGBTMOD?/a> 50 Amperes/1200 Volts Trench Gate Design Dual IGBTMOD⑩ 50 Amperes/1200 Volts Trench Gate Design Dual IGBTMOD 50 Amperes/1200 Volts
|
Powerex Power Semiconductors
|
CM200DU-12F |
Trench Gate Design Dual IGBTMOD 200 Amperes/600 Volts Trench Gate Design Dual IGBTMOD⑩ 200 Amperes/600 Volts
|
Powerex Power Semiconductors
|
CM400DU-12F |
Trench Gate Design Dual IGBTMOD?/a> 400 Amperes/600 Volts Trench Gate Design Dual IGBTMOD⑩ 400 Amperes/600 Volts Trench Gate Design Dual IGBTMOD 400 Amperes/600 Volts
|
Powerex Power Semiconductor... Powerex Power Semiconductors
|
CM150DU-12F |
Trench Gate Design Dual IGBTMOD?/a> 150 Amperes/600 Volts Trench Gate Design Dual IGBTMOD 150 Amperes/600 Volts Trench Gate Design Dual IGBTMOD⑩ 150 Amperes/600 Volts
|
POWEREX[Powerex Power Semiconductors]
|
CM300DU-24F |
Trench Gate Design Dual IGBTMOD?/a> 300 Amperes/1200 Volts Trench Gate Design Dual IGBTMOD⑩ 300 Amperes/1200 Volts Trench Gate Design Dual IGBTMOD 300 Amperes/1200 Volts
|
POWEREX[Powerex Power Semiconductors]
|
CM100DU-12F |
Trench Gate Design Dual IGBTMOD?100 Amperes/600 Volts Trench Gate Design Dual IGBTMOD⑩ 100 Amperes/600 Volts Trench Gate Design Dual IGBTMOD 100 Amperes/600 Volts
|
Powerex Power Semicondu... POWEREX[Powerex Power Semiconductors]
|
FQB3N60 |
This N-channel MOSFETS use advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications.
|
Kersemi Electronic Co.,...
|
STGWT40V60DF STGW40V60DF |
Trench gate field-stop IGBT, V series
|
STMicroelectronics
|
STGWT30H65FB STGW30H65FB |
Trench gate field-stop IGBT, HB series 650 V, 30 A high speed
|
ST Microelectronics
|